4H n-Type SiC Substrate
SICC is constantly pursuing higher crystal quality and processing quality to meet customer needs.
The 6 inch product is available for supply currently
The 8-inch product is under development
*Please contact our sales for more detailed information.
Surface Finish Epi-ready
Power Electronics Devices
By growing silicon carbide epitaxial layer on the n-Type silicon carbide substrate, the silicon carbide homogenous epitaxial wafer can be further made into SBD, MOSFET, IGBT and other power devices, which are applied in the fields of EV, rail transit and high power transmission and transformation.
© 2021 Copyright SICC Co., Ltd. All Rights Reserved.